| PART |
Description |
Maker |
| 831C-3J 831C-4 831C-1 831C-1G 831C-1J 831C-2 831C- |
1N4001 DIO RECT 100V
DIODE ZENER SINGLE 1000mW 62Vz 4mA-Izt 0.05 5uA-Ir 47.1Vr DO41-GLASS 5K/REEL
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 1K/BULK
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 5K/AMMO
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 5K/REEL-13
IC LOGIC 3306 DUAL FET BUS SWITCH -40 85C TSSOP-8 - OBSOLETE
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1.2V-vf 200ns 5uA-ir A405 5K/REEL-13
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 5K/AMMO
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 200ns 5uA-ir A405 5K/REEL-13
DIODE ZENER SINGLE 1000mW 68Vz 3.7mA-Izt 0.05 5uA-Ir 51.7Vr DO41-GLASS 5K/AMMO 83系列成型双酯通孔和表面贴装干簧继电器
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 5K/REEL-13 83系列成型双酯通孔和表面贴装干簧继电器
83 SERIES MOLDED DIP THRU-HOLE AND SURFACE MOUNT DRY REED RELAYS 83系列成型双酯通孔和表面贴装干簧继电器
IC PLL CLK GENERATOR 1:6 32-LQFP 83系列成型双酯通孔和表面贴装干簧继电器
83 SERIES MOLDED DIP THRU-HOLE AND SURFACE MOUNT DRY REED RELAYS
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http://
List of Unclassifed Manufacturers
ETC[ETC]
Gordos
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
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| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
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ADVANCED SEMICONDUCTOR INC
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| M160FG |
High Voltage Diodes - Axial Lead 10mA - 100mA ?200ns ?Hermetic
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Voltage Multipliers Inc...
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| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
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Intersil
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
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Samsung Electronic
|
| M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
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Lattice Semiconductor
|
| MX25R1035F |
Wide Vcc Range, 1M-BIT
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Macronix International
|
| PMO-6022SN-42UQ |
Sensitivity Range -42 ± 3 dB RL = 2.2 k?Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
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Mallory performance clu...
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| TLWBG7600 TLWTG7600 TLWY7600 TLW_76__ TLWB7600 TLW |
RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.2V-vf 200ns 5uA-ir A405 5K/REEL-13 TELUXE
TELUXE TELUXE
From old datasheet system
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
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| 10085176-Y37LF |
SMT DOUBLE ROW VCC ASEEMBLY
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FCI connector
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